| 摘要 |
PROBLEM TO BE SOLVED: To provide a producing method for semiconductor device, with which HSG can be surely formed on a lower electrode inside a cylinder for capacitor, even in the case of a semiconductor device mixedly packaged with a CMIS logic circuit part and a DRAM part provided with a capacitor in a cylinder structure. SOLUTION: Concerning the producing method for the semiconductor device, with which the HSG is formed on the lower electrode, mixedly packaged with the DRAM having the capacitor for storing information by storing signal charges and the logic device comprising a logic circuit, a polysilicon film to become the lower electrode is respectively formed on the inner wall and inter- layer film of the cylinder as a groove provided on the inter-layer film for forming the capacitor, the HSG is respectively formed on the polysilicon films formed inside the cylinder and on the inter-layer film, and while remaining the polysilicon film and the HSG inside the cylinder, the polysilicon film and the HSG on the inter-layer film are respectively removed. |
