| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide TFT where the crystal grain size in a polycrystal silicon film of an active layer is large and constant while light is prevented from being irradiated to a joint surface with an electric field concentrated. SOLUTION: On a glass substrate 10, a light-shielding film 100 of chromium and an insulating film 101 are formed, over which an amorphous silicon film 13 is laminated, which is irradiated with laser beam to provide a polycrystal silicon film 13. The polycrystal silicon 13 has an LDD structure, over which a gate insulating film 12 and a gate electrode 11 are formed. Here, the light- shielding film 100 is so formed as to even cover an LDD region 13LD.</p> |
