发明名称 |
EXPOSURE SYSTEM, METHOD FOR REPLACING GAS, METHOD OF MANUFACTURING DEVICE, SEMICONDUCTOR MANUFACTURING PLANT, AND MAINTENANCE METHOD |
摘要 |
PROBLEM TO BE SOLVED: To quickly lower the concentration of the gas in a chamber at the beginning. SOLUTION: An exposure system is provided with a chamber surrounding a prescribed space, a first supply device that supplies a first gas into the chamber, and a second supply device that supplies a second gas different from the first gas into the chamber. The system is also provided with a switch mechanism which supplies either one of the gases into the chamber by switching the first and second supply devices to each other. Consequently, the stagnating gas replaced conventionally by molecular diffusion only can be replaced quickly. |
申请公布号 |
JP2001284211(A) |
申请公布日期 |
2001.10.12 |
申请号 |
JP20000093687 |
申请日期 |
2000.03.30 |
申请人 |
CANON INC |
发明人 |
YABU SHUICHI |
分类号 |
G03F7/22;G03F7/20;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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