SEMICONDUCTOR DEVICE OF NITRIDE GROUP III-V COMPOUND AND METHOD OF MANUFACTURING THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device of nitride group III-V compound and a method for manufacturing the device, which can reduce crystalline defects in a nitride group III-V compound semiconductor growth layer to improve characteristics. SOLUTION: An active region 6 is provided on a lateral growth layer 5 grown in a C-axis direction of a semiconductor device of nitride group III-V compound laminated by the nitride group III-V compound on a surface parallel to a C axis.