STRUCTURE DE PLOT DE GRILLE D'UN TRANSISTOR VERTICAL DE TYPE MOS OU IGBT

摘要

Active MOS cells are formed in the openings of a layer of polycrystalline silicon. The grid contact is formed in the phantom cell region similar to the active cells, but in which the upper surface of the openings in the silicon is isolated, and in which portions of the upper surface are stripped and in contact with the metal grid.