| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a photovoltaic device which uses a fine crystal silicon semiconductor thin film having a thin film as an optical active layer. SOLUTION: By plasma CVD with substrate temperatures at the time of forming a film at 200 deg.C or more, a fine crystal silicon germanium with a composition ratio of germanium being 20% to 50% is formed, and this fine crystal silicon germanium is used as an optical active layer.</p> |
