| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a metal oxide film, having a high dielectric strength enough as a protective film for aluminum-containing metal wirings, such as thin-film semiconductor elements of a liquid crystal display panel or integrated circuits. SOLUTION: An oxide film of an aluminum-containing metal, having IR absorption spectrum peaks of 920-956 cm-1 near 960 cm-1 is formed. Such a film can be made by anodic oxidation of an Nd-containing aluminum thin film at a current density of 1.0 mA/cm2 and a voltage of 50 V, using a forming liquid of ammonium tartrate.</p> |
