| 摘要 |
PROBLEM TO BE SOLVED: To form a Cu film or Cu1-xSix film that can be positively controlled, and is homogeneous with high quality. SOLUTION: This device for forming the Cu film is equipped with a vacuum container 1, a heating/cooling device 2 that is arranged in the vacuum container 1 and supports a Cu plate 4 at one side, a substrate-heating device 3 that is arranged in the vacuum container 1 and supports a substrate 6 at one side while the substrate 6 faces the Cu plate 6, a chlorine gas nozzle 7 that applies a chlorine gas to the Cu plate 6 in the vacuum container 1, a flow rate- controlling device 9 that controls the flow rate of gas from the chlorine gas nozzle 7, and a vacuum exhaust device 10 that carries out evacuation in the vacuum container 1.
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