| 摘要 |
PROBLEM TO BE SOLVED: To provide an MIM capacitor having excellent high frequency characteristics. SOLUTION: A first insulation film 2 and a lower electrode 3 are formed on a semiconductor substrate 1 and then a capacitor film 5 and an upper electrode 6 are formed sequentially in the opening 20 of a second insulation film formed on the lower electrode 3. Subsequently, a third insulation film 7 is formed followed by formation of a first lead out electrode 9 for the lower electrode 3 and a second lead out electrode for the upper electrode 6 thus constituting an MIM capacitor. The first lead out electrode is formed to surround at least three sides of the capacitor film 5 and error of capacitance and phase rotation are reduced at high frequency by defining the width h of the capacitor film according to a following expression. h<(af)1/2 where, a is a constant inherent to a process, and f is maximum working frequency.
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