MANUFACTURING METHOD OF STRAIN MULTIPLE QUANTUM WELL STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide the manufacturing method of strain multiple quantum well structure that recovers undulations on a surface caused by the film thickness fluctuation of a well layer (5) with a high compression strain of 1.5% or higher by a barrier layer (4), and can obtain a crystal with good quality. SOLUTION: The barrier layer (4) is formed by the organic metal molecular beam epitaxy method where a growth speed is set to 0.5 to 1.05 nm/second or the gas source molecular beam epitaxy method.