发明名称 MAGNETORESISTIVE EFFECT ELEMENT, MANUFACTURING METHOD THEREOF AND MAGNETORESISTIVE EFFECT MAGNETIC HEAD
摘要 PROBLEM TO BE SOLVED: To assure the soft magnetic characteristics of a so-called free layer while magnetoresistance change rate is improved. SOLUTION: A magneto-sensitive part 9 whose electric resistance changes according to external magnetic field is provided, and a low-resistance metal layer 10 is so formed as to contact the magneto-sensing part 9. An oxide layer 11 is formed on the surface opposite to a surface of the low-resistance metal layer 10 which contacts the magneto-sensing part 9.
申请公布号 JP2001284680(A) 申请公布日期 2001.10.12
申请号 JP20000097944 申请日期 2000.03.30
申请人 SONY CORP 发明人 MIZUGUCHI TETSUYA
分类号 G11B5/39;H01F10/30;H01F10/32;H01L43/08;H01L43/12;(IPC1-7):H01L43/08 主分类号 G11B5/39
代理机构 代理人
主权项
地址