| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky diode structure which is improved in forward characteristics by lessening the reverse leakage current. SOLUTION: On the surface of an N type substrate 1 connected to a cathode 9 and formed with an N type low concentration layer 2, recesses 4 are formed at intervals of Wm. The recesses 4 are filled with polycrystalline silicon to form P regions 5. On the upper face 7 of the P regions 5 and the upper face 6 of the other part, an anode 8 which satisfies the following formulae is Schottky-bonded: Wm≈Wt×Na/Nb (Wm is the intervals between the recesses 4, Nd is the concentration of the second N type layer 2, and Wt and Na are the width and the concentration of the P regions 5 respectively), Wm<= 2×ε0×εS×(BVAK/n)/q×Nd}1/2 (the breakdown voltage BVAK=60×(Eg/1.1)1.5×(Nd/1016)-3/4, Eg is the energy band gap of the semiconductor material,ε0 is the permittivity of vacuum,εS is the dielectric constant of the semiconductor material, q is the elementary electric charge, and n>1). |
