| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which can form an inter-power-source capacitance without needing a new space, and improve the noise resistance or high frequency characteristics of power lines without increasing the pads. SOLUTION: In a semiconductor device having a multilayer wiring structure composed of a plurality of wiring layers and pad regions 13 disposed around an inner region 11 on the surface central part, various elements such as inter- power-source capacitances 19, protective elements 31 and input/output elements forming I/O regions 12 are formed below the pad regions 13. |
