发明名称 SURFACE-EMITTING SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser that can obtain high laser output and has a small laser radiation angle, and its manufacturing method. SOLUTION: In a surface-emitting semiconductor laser 100, a resonator 120 including a columnar part 110 is formed, and an emission part 111 having a convex lens shape is formed on the upper surface of the columnar part 110. The columnar part 110 has buried structure, and is formed by burying the periphery of the columnar part 110 with a buried layer 106. The buried layer 106 is made of a substance having non-affinity to a material that is used for forming the emission part 111.
申请公布号 JP2001284725(A) 申请公布日期 2001.10.12
申请号 JP20000098766 申请日期 2000.03.31
申请人 SEIKO EPSON CORP 发明人 KONDO TAKAYUKI
分类号 H01S5/183;(IPC1-7):H01S5/183 主分类号 H01S5/183
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