| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processor which can prevent generation of an abnormal plasma to realize stable plasma processing. SOLUTION: The plasma processor includes processing chambers 1 and 2 having inner wall surfaces for performing plasma processing within the chambers; a microwave radiation member 5 for radiating and propagating microwave to the interiors of the processing chambers, which has one wall surface facing interiors of the processing chambers and the other wall surface positioned opposed to one wall surface and facing the inner wall surfaces of the processing chambers, and which has a space 20 defined between the other wall surface and part of the inner wall surfaces of the processing chambers; and means 14, 20 and 21 for supplying reaction gases into the interiors of the processing chambers. The reaction gas supply means include reaction gas supply paths 20 having a space defined between the other wall surface of the microwave radiation member and part of the inner wall surfaces of the processing chambers. Conductive layers 15 are formed on a region of the other wall surface of the microwave radiation member facing the reaction gas supply paths. |
