| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and method for forming a large area, deposited film by which a function film and a high quality of thin film can be formed without defects on an object to be processed, which can realize a large area plasma even in a deposited film forming apparatus based on a plasma CVD method, a sputtering method or an etching method, and which can realize better deposited film processing operation without defects. SOLUTION: In the apparatus and method for forming a deposited film on a substrate in a reaction space by a plasma CVD method by applying a high frequency power to a cathode electrode to generate a plasma of material gas, the apparatus is arranged to suppress discharge under the cathode electrode and as well as creeping of the material gas and plasma into a lower space under the electrode.
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