| 摘要 |
PROBLEM TO BE SOLVED: To prevent oxidization between the lower electrode of a capacitor and a plug. SOLUTION: A hole 18 is formed on an insulating film 17, a barrier metal layer 19a is formed on the inner surface of the hole 18 and the upper surface of the insulating film 17, and a tungsten layer 19b is formed on the barrier metal layer 19a inside the hole 18 by CVD. Then, the tungsten layer 19b and the barrier metal layer 19a are removed from the upper surface of the insulating film 17 by either grinding or etching, the tungsten layer 19b is left inside the hole 18 in the state of making a recessed part 18a existent at the upper part inside the hole 18, and a contact metal layer 19c is formed inside the insulating film 17 and the recessed part 18a. Then, the contact metal layer 19c is removed from the upper surface of the insulating film 17 and left only inside the recessed part 18a by either grinding or etching, a ferroelectric capacitor 20 is formed thereon and further, the capacitor 20 is annealed in the oxygen-containing atmosphere. |
