| 摘要 |
PROBLEM TO BE SOLVED: To provide a producing method for semiconductor device, with which the value of the dielectric dissipation factor of a dielectric film comprising a storage capacitor is reduced and the dielectric loss of stored charges in the storage capacitor is prevented. SOLUTION: After a stacked capacitor SC is formed, a silicon substrate 1 is rapidly heated to 500 to 800 deg.C inside the nitrogen atmosphere by lamp heating, for example, and Rapid Thermal Annealing(RTA) for about 3 to 60 sec is performed. Then, in order to correct the drop of voltage resistance caused by this RTA, continuously, the silicon substrate 1 is heated to 300 to 600 deg.C inside oxidative gases and annealing for 30 minutes to 6 hours is performed. |
