发明名称 |
CHIP DIVISION METHOD FOR SEMICONDUCTOR WAFER |
摘要 |
<p>PROBLEM TO BE SOLVED: To enable easy division without requiring large pressure and improve yield by raising probability of division starting from a division groove. SOLUTION: A groove 5 for reducing the thickness is formed on the surface at a semiconductor layer formation side of a semiconductor wafer 1 and a scribe line 6 as a division groove is formed. After heating by casting a laser beam 21 on a groove lower part 8 only along a scribe line 6, liquid nitrogen 22 is immediately brought into contact with the entire semiconductor wafer 1, and thermal impact is given. Cracks are generated and proceed by the thermal impact starting from the bottom of the scribe line 6.</p> |
申请公布号 |
JP2001284292(A) |
申请公布日期 |
2001.10.12 |
申请号 |
JP20000099894 |
申请日期 |
2000.03.31 |
申请人 |
TOYODA GOSEI CO LTD |
发明人 |
KAMIMURA TOSHIYA;SHIMONO SHINJI;HASHIMURA MASAKI |
分类号 |
B23K26/00;B23K101/40;H01L21/301;(IPC1-7):H01L21/301 |
主分类号 |
B23K26/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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