| 摘要 |
<p>PROBLEM TO BE SOLVED: To increase throughput by shortening time for cooling a wafer. SOLUTION: In a method of forming a film on a wafer by the use of a multi-chamber type CVD device having a transfer chamber, a cassette chamber, a cooling chamber, and a CVD chamber, three holding shelves 36A, 36b, 36C, each of which is engaged with a part of outside peripheral portion of the bottom surface of a wafer 1 for holding the wafer 1, are aligned in the top, middle, and bottom steps in a cooling space 32 of a cooling device 3 of a cooling chamber and a wafer 37 for absorbing heat is placed beforehand on the middle shelf 36B. When the wafers 1, 1, having a film formed in the CVD chamber are cooled, they are transferred to the top shelf 36A and the bottom shelf 36C, by a pair of tweezers 18a of a wafer transfer unit 18 and exchange heat with the wafer 37 on the middle shelf 36B, thereby being cooled forcibly.</p> |
