发明名称 SEMICONDUCTOR LASER ELEMENT AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser element and its manufacturing method that reduce a driving current and a driving voltage when output is high, and at the same time maintain excellent reliability for a long time. SOLUTION: In this semiconductor laser element that has a first conductive cladding layer, an active layer, a second conductive cladding layer with a ridge- shaped stripe, and a first conductive current constriction layer with the ridge- shaped stripe on a first conductive substrate, and also has a laser resonator that is formed in a ridge-shaped stripe direction, one main surface of the substrate is (100) surface, or is inclined from the surface (100), the oblique angle of the substrate in a region near the end face of the laser resonator is smaller than that of the internal region of the laser resonator, and the band gap of the active layer in the region near the end face of the laser resonator is larger than that of the active layer in the internal region of the laser resonator.
申请公布号 JP2001284721(A) 申请公布日期 2001.10.12
申请号 JP20000096074 申请日期 2000.03.31
申请人 SHARP CORP 发明人 OKUBO NOBUHIRO
分类号 H01S5/16;H01S5/223;(IPC1-7):H01S5/16 主分类号 H01S5/16
代理机构 代理人
主权项
地址