| 摘要 |
PROBLEM TO BE SOLVED: To rapidly heat or heat-treat the entire surface to be treated of a planar substance to be treated with highly accurate temperature uniformity. SOLUTION: The temperature of a planar heat-generating source arranged at a fixed prescribed position facing to a semiconductor wafer is kept at a constant temperature, for example 1,300 deg.C, while making nitrogen gas (N2), to flow the semiconductor wafer is transferred upward (approaching) at a rate (first rate) of, for example, 200 mm/sec until the temperature of the semiconductor wafer reaches to approximately 500 deg.C starting from room temperature. It the temperature of the semiconductor wafer reaches approximately 500 deg.C, the semiconductor wafer is further transferred upward (approaching) at a rate (second rate) of, for example 100 mm/sec until the temperature of the semiconductor wafer reaches approximately 1,200 deg.C. After the temperature of the semiconductor wafer reaches approximately 1,200 deg.C, the wafer is fixed at the stopped position, and oxidation or diffusion process is carried out, while stopping feeding of nitrogen gas and instead, feeding oxygen gas (O2) to the semiconductor wafer.
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