发明名称 HIGH FREQUENCY TRANSMISSION LINE STRUCTURE AND PACKAGE FOR HIGH FREQUENCY SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an inexpensive transmission line structure, which is composed of a platelike dielectric substrate without using a via hole, for efficiently transmitting signals while reducing reflections from low frequency to high frequency and a package for a high frequency semiconductor device. SOLUTION: In the transmission line structure embedded in the dielectric substrate to pass while detouring a metal wall body formed in the main side of this dielectric substrate, a strip line is formed orthogonally to the main side of the dielectric substrate.
申请公布号 JP2001284911(A) 申请公布日期 2001.10.12
申请号 JP20000101061 申请日期 2000.04.03
申请人 SUMITOMO METAL ELECTRONICS DEVICES INC 发明人 YAMAMOTO TOSHISHIGE
分类号 H01P3/08;H01P5/08 主分类号 H01P3/08
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