| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which can cope with a large-area substrate and capable of preventing the generation of abnormal plasma. SOLUTION: A plasma processing apparatus has a wall 1 forming a process chamber 18 in which a process using plasma is performed, and microwave introducing means 13, 3, 4, 5 for introducing microwaves to transform a reactive gas supplied into the process chamber 18 into a plasma state. The microwave introducing means 13, 3, 4, 5 includes a microwave introducing window 4, which extends through in the direction of thickness of the wall 1 from the outside of the processing chamber 18 to the inside, and a microwave irradiating part 5 put into contact with the outer peripheral sidewall surface 20 of the microwave introducing window 4 and with the surface of the wall part 1 in the processing chamber 18. |
