| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a plasma CVD system and a method for forming a non- single crystal semiconductor thin film in which a high quality semiconductor thin film can be formed at a high deposition rate while suppressing defects. SOLUTION: At least one surface of a hydrogen adsorption alloy 46 is exposed in a plasma discharge space or at a position contiguous thereto. The hydrogen adsorption alloy 46 is cooled to a specified temperature, as required, using a water cooling mechanism 47, e.g. a water cooling jacket. According to the arrangement, a species containing no group 4A atom generated through plasma discharge decomposition is removed from a gas composed of a compound containing group 4A atoms and hydrogen atoms in a plasma discharge atmosphere thus lowering partial pressure of the species containing no group 4A atom. Consequently, a high quality photovoltaic element having excellent uniformity and reduced defects can be produced by forming a semiconductor thin film while satisfying contradictory purposes of high deposition rate and high film quality at high level.</p> |
