MEMBER FOR CVD-SILICON CARBIDE FILM COVERED SEMICONDUCTOR HEAT TREATMENT

摘要

PROBLEM TO BE SOLVED: To achieve a member that safely reduces process contamination with excellent reproducibility, and at the same time shows dust reduction effect when using the member of CVD-SiC film covered semiconductor heat treatment in a semiconductor process. SOLUTION: In the member where a CVD-SiC film is formed on the surface of heat-resistance base, the surface is ground so that the maximum height from the average line of a projection that becomes a peak should be equal to 3μm or less, and depth from the average line of a trough should be 0.1 to 10μm in a surface roughness curve obtained by performing undulation correction to a result obtained by a surface roughness meter.