发明名称 SURFACE-EMITTING SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser that can effectively obtain a laser beam that is set to a single horizontal mode, and at the same time has a beam shape close to a round, and its manufacturing method. SOLUTION: In a surface-emitting semiconductor laser 100, a resonator 120 is formed on a semiconductor substrate 101 with a plane index (100). The resonator 120 includes a columnar part 110, and a current constriction layer 111 is formed at the columnar part 110. On a surface including the current constriction layer 111, the shape of a circumference 140 at the columnar part 110 includes annular parts 140a1 to 140a4 that are similar to one part of the inner circumference 111a of the current constriction layer 111. Each annular part is formed in each of <010>, <001>, <0-10>, and <00-1> directions from the center of the inner circumference 111a of the current constriction layer 111, and at the same time is formed nearly concentrically with one part of the shape of the inner circumference 111a.
申请公布号 JP2001284727(A) 申请公布日期 2001.10.12
申请号 JP20000091803 申请日期 2000.03.29
申请人 SEIKO EPSON CORP 发明人 KANEKO TAKESHI;KONDO TAKAYUKI;NISHIDA TETSURO
分类号 H01S5/183;H01S5/22;H01S5/343;(IPC1-7):H01S5/183 主分类号 H01S5/183
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