| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristic and reliability of a semiconductor laser device by improving heat dissipating property. SOLUTION: An n-GaAs buffer layer 12, an n-In0.49Ga0.51P etching barrier layer 13, an n-GaAs contact layer 14, an n-Ga1-z1Alz1As lower clad layer 15, an n or i-In0.49Ga0.51P lower optical waveguide layer 16, an Inx3Ga1-x3As-1y3Py3 quantum well active layer 17, a p or i-In0.49Ga0.51P upper optical waveguide layer 18, a p-Ga1-z1Alz1As upper clad layer 19 and a p-GaAs contact layer 20 are grown on an n-GaAs substrate 11. An insulating film 21 is formed on the contact layer 20, and a stripe whose width is about 200μm is formed. A P-side electrode 22 is formed on the stripe. The substrate 11, the buffer layer 12 and the etching barrier layer 13 which are positioned on a region corresponding to the stripe of 200μm and whose widths are 300μm are eliminated, and an N-side electrode 24 is formed. The P-side electrode 22 is bonded to a heat sink 27 by using solder material 26, and a heat sink 29 having a protruding part is bonded to the N-side electrode 24 by using solder material 28.
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