INNER WALL OF PROCESSING CHAMBER FOR PLASMA APPARATUS FOR THIN FILM PROCESSING

摘要

PROBLEM TO BE SOLVED: To provide a member for a plasma etching apparatus which less generates particles. SOLUTION: The member for a processing chamber in a processing apparatus for thin film processing is made of silicon-contained resin having repeated units expressed by a formula (1) (where, R1 and R2 denote each a hydrogen atom or specific group and R3 denotes a specific group containing -C≡C-), silicon- contained resin composition or cured material thereof.