| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric memory device having a barrier film selectively formed around a ferroelectric only and capable of preventing the ferroelectric from being reduced by hydrogen. SOLUTION: Except for regions of a capacitor first electrode 107, a ferroelectric film 108 and a capacitor second electrode 109, an aluminum film 110 is implanted with oxygen ions 111 through a resist 112 to form an aluminum oxide film 113, and it is then dipped in a phosphoric acid mixed liquid to remove the non-oxidated aluminum film, thus forming a hydrogen barrier film around the ferroelectric capacitor only. |
