| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem in the conventional bump-forming method where the region beneath the electrode of a semiconductor element is damaged at forming of a bump, because a capillary for compressing a ball formed by flying a spark to a gold wire has a large amplitude to cause unstable electrical connection of the semiconductor element and a facing substrate via bumps, and that the function of the semiconductor element cannot be secured because of variation in the electrical characteristics thereof. SOLUTION: When the frequency of an ultrasonic wave transmitted to a bump is set at 110 kHz or higher, oscillation of a capillary touching the bump can be suppressed to 0.5 μm or less, and since the ball compression thickness of bump of 2 μm or above can be ensured, damages can be suppressed in the vicinity of joint of the electrode of a semiconductor element and the bump. |
