| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for depositing a film with which the extent of flatness can be improved. SOLUTION: This method comprises a step of supplying a substrate which already has an element structure which results in uneven topography, a step of forming the film, and while forming the film, performing ion bombardment to promote gap-filling of the film, and a step of continuously performing the ion bombardment up to a specified time, after stopping the film formation to improve the extent of the flatness of the film.
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