发明名称 SUBSTRATE TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate treatment method of high cleaning level, which reduces the number of particles stuck to a substrate after the treatment is terminated in the processing for immersing the substrate in an etchant. SOLUTION: Degassed ozone water is supplied to a liquid supply port 12 of a treatment both tank 10 and a clean natural oxidized film is formed on the surface of the substrate W. HF aqueous solution is supplied, while the substrate is immersed in the liquid and pollutant is etched/removed. Pure water is made to flow in, and the substrate is rinsed by pure water. An elevator 40 is raised until the whole substrate W goes out above a liquid level midway, and the whole substrate W is lowered until it is immersed in pure water. Thus, the particles are removed efficiently from the surface of the substrate W. Then, a drying process where the substrate W is dried is conducted.
申请公布号 JP2001284316(A) 申请公布日期 2001.10.12
申请号 JP20000093622 申请日期 2000.03.30
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 FUJIKAWA KAZUNORI
分类号 H01L21/306;H01L21/304;(IPC1-7):H01L21/306 主分类号 H01L21/306
代理机构 代理人
主权项
地址