| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon wafer, which can improve the withstand voltage characteristic and the aged dielectric breakdown of an oxide film of a semiconductor device, improve the yield of the semiconductor device and pull up at a high speed. SOLUTION: The silicon wafer manufacturing method is processed by slicing a silicon single-crystal ingot 8, pulled from a silicon melt 5 of nitrogen-doped polysilicon using the Czochralski method to produce a silicon wafer, annealing this wafer with hydrogen to reduce crystal defects on the surface layer, and increasing the BMD density in the wafer.
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