| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device utilizing a metal element for accelerating crystallization of an amorphous silicon film inexpensively and stably while enhancing the characteristics. SOLUTION: An amorphous silicon film 103 formed on a glass substrate 101 and a base coat film 102 is irradiated with a laser beam and crystallized to produce a crystalline silicon film being utilized in the semiconductor device. Laser irradiation is carried out through a mask patterned to pass the laser beam in correspondence with an activated region. The region irradiated with the laser beam becomes a crystalline silicon film 103a and the region not irradiated remains in the state of an amorphous silicon film 103b. Subsequently, the amorphous silicon film 103b is thermally oxidized by heat treatment and removed thus patterning the activated region 103a.
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