| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a thin polysilicon film useful for fabricating a thin film transistor having a reduced leak component in which generation of charges can be reduced even when it is irradiated with light. SOLUTION: An insulation film 102 is deposited on the surface of a transmissive insulating substrate 101, amorphous thin silicon films 103a, 103b are deposited on the insulation film and the rear surface of the transmissive insulating substrate, the amorphous thin silicon film on the insulation film is formed insularly and irradiated with laser light 106 to form thin polysilicon films 104a, 104b. Amorphous thin silicon films can be formed simultaneously on the opposite sides of a glass substrate by depositing amorphous thin silicon films on the glass substrate by low pressure (LP)-CVD method.
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