SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device of high integration degree per a unit area with no complicated manufacturing process. SOLUTION: There are provided a first semiconductor layer 20 provided on a translucent board 10, a gate electrode 40 provided on the first semiconductor layer 20 through a first gate insulating film 30, and a second semiconductor layer 60 provided on the gate electrode 40 through a second gate insulating film 50. The first and second semiconductor films 20 and 60 comprise channel regions 20c and 60c self-matched to the gate electrode 40.