发明名称 HIGH FREQUENCY AMPLIFIER AND HIGH FREQUENCY SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve high frequency characteristics by reducing impedance between the ground electrode of a high frequency transistor and the real ground. SOLUTION: A first LC serial circuit composed of a bonding wire L8 for grounding and a capacitor C8 for grounding and a second LC serial circuit composed of a bonding wire L9 for grounding and a capacitor C9 for grounding are parallel connected to the source electrode of a high frequency transistor Q1. A third LC serial circuit composed of a bonding wire L10 for grounding and a capacitor C10 for grounding, a fourth LC serial circuit composed of a bonding wire L11 for grounding and a capacitor C11 for grounding,..., and sixth LC serial circuit composed of a bonding wire L13 for grounding and a capacitor C13 for grounding are parallel connected to the source electrode of a high frequency transistor Q2 and respectively grounded.
申请公布号 JP2001284992(A) 申请公布日期 2001.10.12
申请号 JP20000089801 申请日期 2000.03.28
申请人 TOSHIBA CORP 发明人 ONO NAOKO
分类号 H01L23/12;H01L21/06;H01L21/338;H01L21/822;H01L21/8222;H01L21/8232;H01L27/04;H01L27/06;H01L27/095;H01L29/778;H01L29/812;H03F3/195;H03F3/60;(IPC1-7):H03F3/60;H01L21/823 主分类号 H01L23/12
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