| 摘要 |
PROBLEM TO BE SOLVED: To obtain an automatic oscillation type semiconductor laser device in two crystal growth processing steps. SOLUTION: An n-type AlGaInP clad layer 102, an active layer 103, a p-type first clad layer 104 made of a p-type (AlX1Ga1-X1)Z1In1-Z1P (0<=Y<=1 and 0<Z1<1), a current block layer 105 made of an n-type (AlYGa1-Y)Z2In1-Z2P (0<=Y<=1 and 0<Z2<1) having a striped region 105a, a p-type second clad layer 106 made of a p-type (AlX2Ga1-X2)Z3In1-Z3P (0<=X2<=1 and 0<Z3<1), and a p-type GaAs contact layer 107 are formed sequentially on an n-type GaAs substrate 101. In this case, there is a relation of Y>X1 and Y>X2 between aluminum compositions (X1, Y, and X2) included in the p-type first clad layer 104, the current block layer 105, and the p-type second clad layer 106. The excessive saturation absorbing region is formed just under the current block layer 105 in the active layer 103.
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