| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem where semiconductor materials cannot be machined into desired shapes, because stresses that are applied to an edge is limited, since the thickness of a slice tapers off at the edge, and the edge becomes the most fragile part and the same time, is most easily exposed to damages due to stress in a treatment. SOLUTION: In a flat slice (1) of a first conductively-type semiconductor substrate material, a first region (13a) of a second conductively-type, having a dopant concentration that higher than that of a substrate is provided on one surface, and a second region (13b) of a second conductively-type, having the dopant concentration that is higher than that of the substrate, is provided on the surface of the opposite side. Although the junction part between each of the regions (13a and 13b) and the substrate is exposed along a passage which follows the shape of the periphery of the slice, the removal of the material is interrupted at a distance in the outward direction beyond the exposure of the junction part, and the material with depth that is increased gradually, approaching an outer edge is removed from each part of the surface so that an original flat surface rim (11) of the slice remains at the periphery of the slice.
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