发明名称 |
Method for forming aluminum oxide as a gate dielectric |
摘要 |
A method for forming a gate structure begins by preparing a semiconductor substrate provided with an isolation region formed therein. A thin SiO2 layer is thermally grown on top of the semiconductor device by using a wet H2/O2 or a dry O2. And then, an aluminum oxide layer is formed on top of the semiconductor substrate with doping a dopant in situ. A conductive layer is formed on top of the Al2O3 layer. Finally, the conductive layer and the Al2O3 layer are patterned into the gate structure. The dopant is a material selected from a group consisting of Si, Zr, Hf, Nb or the like.
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申请公布号 |
US2001029092(A1) |
申请公布日期 |
2001.10.11 |
申请号 |
US20000727583 |
申请日期 |
2000.12.04 |
申请人 |
PARK DAE-GYU;JANG SE-AUG;LEE JEONG-YOUB;CHO HUNG-JAE;KIM JUNG-HO |
发明人 |
PARK DAE-GYU;JANG SE-AUG;LEE JEONG-YOUB;CHO HUNG-JAE;KIM JUNG-HO |
分类号 |
H01L21/28;H01L21/3115;H01L21/316;H01L29/51;(IPC1-7):H01L21/320;H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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