发明名称 |
Thermal conductivity enhanced semiconductor structures and fabrication processes |
摘要 |
Silicon is formed at selected locations on a substrate during fabrication of selected electronic components. A dielectric separation region is formed within the top silicon layer, and filled with a thermally conductive material. A liner material may be optionally deposited prior to depositing the thermally conductive material. In a second embodiment, a horizontal layer of thermally conductive material is also deposited in an oxide layer or bulk silicon layer below the top layer of silicon.
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申请公布号 |
US2001029084(A1) |
申请公布日期 |
2001.10.11 |
申请号 |
US20010862451 |
申请日期 |
2001.05.23 |
申请人 |
GAUTHIER ROBERT J.;SCHEPIS DOMINIC J.;TONTI WILLIAM R.;VOLDMAN STEVEN H. |
发明人 |
GAUTHIER ROBERT J.;SCHEPIS DOMINIC J.;TONTI WILLIAM R.;VOLDMAN STEVEN H. |
分类号 |
H01L27/04;H01L21/762;H01L21/763;H01L21/822;H01L23/367;H01L27/00;H01L27/12;H01L29/786;(IPC1-7):H01L21/76;H01L23/48 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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