METHOD FOR IMPROVING UNIFORMITY AND REDUCING ETCH RATE VARIATION OF ETCHING POLYSILICON
摘要
An apparatus and method for consecutively processing a series of semiconductor substrates with minimal plasma etch rate variation following cleaning with fluorine- containing gas and/or seasoning of the plasma etch chamber. The method includes steps of (a) placing a semiconductor substrate on a substrate support in a plasma etching chamber, (b) maintaining a vacuum in the chamber, (c) etching an exposed surface of the substrate by supplying an etching gas to the chamber and energizing the etching gas to form a plasma in the chamber, (d) removing the substrate from the chamber; and (e) consecutively etching additional substrates in the chamber by repeating steps (a-d), the etching step being carried out by minimizing a recombination rate of H and Br on a silicon carbide edge ring surrounding the substrate at a rate sufficient to offset a rate at which Br is consumed across the substrate. The method can be carried out using pure HBr or combination of HBr with other gases.
申请公布号
WO0175958(A2)
申请公布日期
2001.10.11
申请号
WO2001US08618
申请日期
2001.03.16
申请人
LAM RESEARCH CORPORATION;NI, TUQIANG;TAKESHITA, KENJI;CHOI, TOM;LIN, FRANK, Y.;COLLISON, WENLI