| 摘要 |
The invention encompasses methods of forming insulating materials proximate conductive elements. In one aspect, the invention includes a method of forming an insulating material proximate a substrate comprising: a) chemical vapor depositing a first material proximate a substrate; b) forming cavities within the first material; and c) after forming cavities within the first material, transforming at least some of the first material into an insulative second material. In anther aspect, the invention includes a method of forming an insulating material proximate a substrate comprising: a) forming porous polysilicon proximate a substrate; and b) transforming at least some of the porous polysilicon into porous silicon dioxide. In yet another aspect, the invention includes a method of forming an insulating material between components of an integrated circuit comprising: a) chemical vapor depositing polysilicon between two components; b) electrochemical anodization of the polysilicon to convert the polysilicon into a porous mass having a first volume, the first volume comprising a polysilicon volume and a cavity volume, the cavity volume comprising greater than or equal to about 75% of said first volume; and c) oxidizing the porous polysilicon mass to transform the polysilicon into porous silicon dioxide having a second volume, the second volume comprising a silicon dioxide volume and a cavity volume, the cavity volume comprising less than or equal to about 50% of said second volume.
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