Heat treatment apparatus

摘要

A substrate heat treatment apparatus irradiating a substrate such as a semiconductor wafer with light and performing heat treatment is provided. 19 lamps 82 are arranged on a plane in the form of a honeycomb to form a lamp group 81. The lamp group 81 has 6-fold rotation symmetry about a symmetry axis XR. A substrate W is rotated about a rotation axis XW in a plane parallel to that formed by the lamp group 81. The symmetry axis XR of the lamp group 81 and the rotation axis XW of the substrate W are displaced for relaxing peaks and bottoms of illuminance distribution on the substrate W resulting from regularity of arrangement of the lamp group 81. Consequently, fluctuation of radial illuminance distribution on the substrate W is reduced and improving uniformity is improved. When the uniformity of radial illuminance distribution on the substrate W is improved, temperature uniformity of the substrate W in heat treatment can be ensured.