发明名称 Solar cell having an integral monolithically grown bypass diode
摘要 The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
申请公布号 US2001027805(A1) 申请公布日期 2001.10.11
申请号 US20010753492 申请日期 2001.01.02
申请人 HO FRANK;YEH MILTON Y.;CHU CHAW-LONG;ILES PETER A. 发明人 HO FRANK;YEH MILTON Y.;CHU CHAW-LONG;ILES PETER A.
分类号 H01L27/142;H01L31/00;H01L31/05;(IPC1-7):B64G1/44 主分类号 H01L27/142
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