发明名称 |
Phase shift mask and method of manufacture |
摘要 |
In a phase shift mask comprising an exposure light-transmitting substrate and a second light-transmitting region thereon, the second light-transmitting region functions as a phase shifter and is made of a fluorine-doped molybdenum silicide film or fluorine-doped chromium silicide film formed by a sputtering technique that uses molybdenum metal, chromium metal, molybdenum silicide or chromium silicide as the target and SiF2 as the reactive gas. The phase shifter has a high refractive index to short-wavelength exposure light, enabling a 180-degree phase change to be achieved at a minimum film thickness, and also has a good stability to such light. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration. |
申请公布号 |
US2001028982(A1) |
申请公布日期 |
2001.10.11 |
申请号 |
US20010790886 |
申请日期 |
2001.02.23 |
申请人 |
OKAZAKI SATOSHI;MARUYAMA TAMOTSU;INAZUKI YUKIO;KANEKO HIDEO;KOHNO SHINICHI |
发明人 |
OKAZAKI SATOSHI;MARUYAMA TAMOTSU;INAZUKI YUKIO;KANEKO HIDEO;KOHNO SHINICHI |
分类号 |
C23C14/00;C23C14/06;G03F1/00;G03F1/08;G03F1/32;G03F1/68;G03F1/80;H01L21/027;(IPC1-7):G03F9/00;C23C14/16;C23C14/14;C23C14/04;B32B15/04 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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