| 摘要 |
<p>A transistor structure having dimensions below about 100 nm is provided. The transistor structure comprises a substrate (100) with a first polarity. The substrate includes a shallow halo implant (108) having the first polarity defined at a first depth within the substrate. The substrate also has a deep halo implant (112) which is the same polarity as the substrate and is defined to a second depth deeper than the first depth of the shallow halo implant. The shallow halo implant and the deep halo implant allow a peak concentration of substrate impurities at a level below the gate such that the resistance of the transistor is minimized along with the threshold voltage, short channel effects and leakage current in the transistor.</p> |
