METHOD FOR DICING SEMICONDUCTOR WAFER INTO CHIPS

摘要

Methods for dicing a semiconductor wafer having a semiconductor layer (3) formed on a substrate (2) into a large number of semiconductor chips. A first method comprises a step of forming a blast-resistant mask (5) having a left pattern of a lattice-like exposed part on the surface of the semiconductor wafer, and a step of making dicing grooves (7) up to a specified depth in the lattice-like exposed part of the substrate by blasting micro particle blast material (21). A second method comprises a step of making relatively narrow first dicing grooves in the surface of the semiconductor wafer on which the semiconductor layer is to be formed by dicing, etching or blasting, and a step of making relatively wide second dicing grooves in positions corresponding to the first dicing grooves in the surface of the semiconductor wafer on which the semiconductor layer is not to be formed.