Semiconductor device and manufacturing method therefor,申请号US20010820781-传众专利搜索

发明名称	Semiconductor device and manufacturing method therefor
摘要	A patterned polysilicon film is formed over a silicon substrate with an interlayer insulating film therebetween. Then heavily doped regions as well as a lightly doped region are formed on the polysilicon film. The entire polysilicon film is covered with an SiO2 film. The polysilicon film is hydrogenated, while an SiNx film is formed over the entire SiO2 film, by LPCVD using a gas comprising nitrogen and hydrogen.
申请公布号	US2001028099(A1)	申请公布日期	2001.10.11
申请号	US20010820781	申请日期	2001.03.30
申请人	NEC CORPORATION	发明人	SATO NOLIFUMI
分类号	H01L27/04;H01L21/205;H01L21/314;H01L21/316;H01L21/318;H01L21/336;H01L21/822;H01L21/8244;H01L23/52;H01L27/11;H01L27/12;H01L29/786;(IPC1-7):H01L27/13;H01L21/20	主分类号	H01L27/04
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